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  1 ltc1693 typical applicatio n u descriptio u features applicatio s u high speed single/dual n-channel mosfet drivers n dual mosfet drivers in so-8 package or single mosfet driver in msop package n 1g w electrical isolation between the dual drivers permits high/low side gate drive n 1.5a peak output current n 16ns rise/fall times at v cc = 12v, c l = 1nf n wide v cc range: 4.5v to 13.2v n cmos compatible inputs with hysteresis, input thresholds are independent of v cc n driver input can be driven above v cc n undervoltage lockout n thermal shutdown the ltc ? 1693 family drives power n-channel mosfets at high speed. the 1.5a peak output current reduces switching losses in mosfets with high gate capacitance. the ltc1693-1 contains two noninverting drivers while the ltc1693-2 contains one noninverting and one invert- ing driver. these dual drivers are electrically isolated and independent. the ltc1693-3 is a single driver with an output polarity select pin. all mosfet drivers offer v cc independent cmos input thresholds with 1.2v of typical hysteresis. they can level- shift the input logic signal up or down to the rail-to-rail v cc drive for the external mosfet. the ltc1693 contains an undervoltage lockout circuit and a thermal shutdown circuit that disable the external n-channel mosfet gate drive when activated. the ltc1693-1 and ltc1693-2 come in an 8-lead so pack- age. the ltc1693-3 comes in an 8-lead msop package. n power supplies n high/low side drivers n motor/relay control n line drivers n charge pumps two transistor forward converter , ltc and lt are registered trademarks of linear technology corporation. 12v in boost tg ts sense + sense bg phase run/shdn v fb 20 19 18 r6 100 r7 100 11 bat54 12 16 14 13 r8 301k 1% r2 5.1 r10 10k 1% 9 8 c15 0.1 f c14 3300pf c11 0.1 f c12 100pf c7 1 f c8 1 f c3 4700pf 25v c4 0.1 f l1 1.5 h t1 13:2 v out 1.5v/15a return 1693 ta01 c13 1 f c1: sanyo 63mv330gx c2: wima smd4036/1.5/63/20/tr c6: kemet t510x477m006as ( 8) l1: gowanda 50-318 t1: gowanda 50-319 c5 1 f c10 0.1 f c9 1800pf 5% npo r9 12k r5 2.49k 1% 15 17 2 1 12v return v in 48vdc 10% 4 3 5 6 7 10 sync 5v ref sl/adj c t i avg ss v c v ref pgnd sgnd lt1339 ltc1693cs8-2 d2 murs120 in1 gnd1 in2 gnd2 8 7 6 5 1 2 3 4 v cc1 out1 v cc2 out2 ltc1693cs8-2 in1 gnd1 in2 gnd2 8 7 6 5 1 2 3 4 v cc1 out1 v cc2 out2 d4 mbro530t1 d3 murs120 q1 mtd20no6hd d1 murs120 c2 1.5 f 63v c1 330 f 63v q3 mtd20no6hd q4 si4420 r1 0.068 + q2 si4420 2 c6 470 f 6.3v 8 + r3 249 1% r4 1.24k 1%
2 ltc1693 absolute m axi m u m ratings w ww u supply voltage (v cc ) .............................................. 14v inputs (in, phase) ................................... C 0.3v to 14v driver output ................................. C 0.3v to v cc + 0.3v gnd1 to gnd2 (note 5) ..................................... 100v junction temperature .......................................... 150 c operating ambient temperature range c-grade ................................................... 0 c to 70 c i-grade ................................................C40 c to 85 c storage temperature range ................. C 65 c to 150 c lead temperature (soldering, 10 sec).................. 300 c package/order i n for m atio n w u u order part number s8 part marking ltc1693-1cs8 ltc1693-1is8 16931 16931i 1 2 3 4 8 7 6 5 top view v cc1 out1 v cc2 out2 in1 gnd1 in2 gnd2 s8 package 8-lead plastic so t jmax = 150 c, q ja = 135 c/ w 1 2 3 4 8 7 6 5 top view v cc1 out1 v cc2 out2 in1 gnd1 in2 gnd2 s8 package 8-lead plastic so t jmax = 150 c, q ja = 135 c/ w order part number s8 part marking ltc1693-2cs8 ltc1693-2is8 16932 16932i 1 2 3 4 in nc phase gnd 8 7 6 5 v cc out nc nc top view ms8 package 8-lead plastic msop t jmax = 150 c, q ja = 200 c/ w order part number ms8 part marking ltc1693-3cms8 lteb consult factory for industrial and military grade parts. electrical characteristics the l denotes specifications which apply over the full operating temperature range, otherwise specifications are at t a = 25 c. v cc = 12v, unless otherwise noted. symbol parameter conditions min typ max units v cc supply voltage range 4.5 13.2 v i cc quiescent current ltc1693-1, ltc1693-2, in1 = in2 = 0v (note 2) l 400 720 1100 m a ltc1693-3, phase = 12v, in = 0v l 200 360 550 m a i cc(sw) switching supply current ltc1693-1, ltc1693-2, c out = 4.7nf, f in = 100khz l 14.4 20 ma ltc1693-3, c out = 4.7nf, f in = 100khz l 7.2 10 ma input v ih high input threshold l 2.2 2.6 3.1 v v il low input threshold l 1.1 1.4 1.7 v i in input pin bias current l 0.01 10 m a v ph phase pin high input threshold (note 3) l 4.5 5.5 6.5 v i ph phase pin pull-up current phase = 0v (note 3) l 10 20 45 m a output v oh high output voltage i out = C10ma l 11.92 11.97 v v ol low output voltage i out = 10ma l 30 75 mv r onl output pull-down resistance 2.85 w r onh output pull-up resistance 3.00 w i pkl output low peak current 1.70 a i pkh output high peak current 1.40 a (note 1)
3 ltc1693 electrical characteristics symbol parameter conditions min typ max units switching timing (note 4) t rise output rise time c out = 1nf l 17.5 35 ns c out = 4.7nf l 48.0 85 ns t fall output fall time c out = 1nf l 16.5 35 ns c out = 4.7nf l 42.0 75 ns t plh output low-high propagation delay c out = 1nf l 38.0 70 ns c out = 4.7nf l 40.0 75 ns t phl output high-low propagation delay c out = 1nf l 32 70 ns c out = 4.7nf l 35 75 ns driver isolation r iso gnd1-gnd2 isolation resistance ltc1693-1, ltc1693-2 gnd1-to-gnd2 voltage = 75v l 0.075 1 g w note 1: absolute maximum ratings are those values beyond which the life of a device may be impaired. note 2: supply current is the total current for both drivers. note 3: only the ltc1693-3 has a phase pin. note 4: all ac timing specificatons are guaranteed by design and are not production tested. note 5: only applies to the ltc1693-1 and ltc1693-2. typical perfor a ce characteristics uw in threshold voltage vs v cc temperature ( c) ?0 input threshold hysteresis (v) 1.2 1.3 1.4 25 75 1693 g03 1.1 1.0 25 0 50 100 125 0.9 0.8 v cc = 12v v ih -v il in threshold hysteresis vs temperature in threshold voltage vs temperature v cc (v) 5 2.00 2.25 2.75 810 1693 g01 1.75 1.50 67 91112 1.25 1.00 2.50 input threshold voltage (v) v ih v il t a = 25 c temperature ( c) ?0 input threshold voltage (v) 2.75 25 1693 g02 2.00 1.50 ?5 0 50 1.25 1.00 3.00 2.50 v ih v il 2.25 1.75 75 100 125 v cc = 12v the l denotes specifications which apply over the full operating temperature range, otherwise specifications are at t a = 25 c. v cc = 12v, unless otherwise noted.
4 ltc1693 typical perfor a ce characteristics uw phase threshold voltage vs v cc rise/fall time vs v cc v cc (v) 5 18 20 24 810 t rise t fall 1693 g05 16 14 67 91112 12 10 22 time (ns) t a = 25 c c out = 1nf f in = 100khz rise/fall time vs c out propagation delay vs temperature propagation delay vs v cc output saturation voltage vs temperature propagation delay vs c out temperature ( c) ?5 0 output saturation voltage (mv) 50 100 150 200 35 15 5 25 1693 g11 45 65 85 105 125 v oh (50ma) wrt v cc v oh (10ma) wrt v cc v ol (50ma) v ol (10ma) v cc = 12v quiescent current vs v cc (single driver) v cc (v) 5 phase threshold voltage (v) 4 5 6 810 1693 g04 3 2 67 91112 1 0 t a = 25 c v ph(h) v ph(l) temperature ( c) ?0 10 time (ns) 11 13 14 15 20 17 0 50 75 1693 g06 12 18 19 16 ?5 25 100 125 v cc = 12v c out = 1nf f in = 100khz t rise t fall rise/fall time vs temperature v cc (v) 5 10 time (ns) 15 25 30 35 7 55 1693 g08 20 68911 10 12 t plh t phl 40 45 50 t a = 25 c c out = 1nf f in = 100khz temperature ( c) ?0 time (ns) 40 45 50 25 75 1693 g09 35 30 ?5 0 50 t plh t phl 100 125 25 20 v cc = 12v c out = 1nf f in = 100khz c out (pf) 30 time (ns) 40 50 1 100 1000 10000 1693 g10 20 10 t a = 25 c v cc = 12v f in = 100khz t plh t phl v cc (v) 56 100 quiescent current ( a) 200 350 7 9 10 1693 g12 150 300 250 8 11 12 t a = 25 c v in = 0v c out (pf) 20 time (ns) 40 60 80 100 1 100 1000 10000 1693 g07 0 10 120 t a = 25 c v cc = 12v f in = 100khz t rise t fall
5 ltc1693 typical perfor a ce characteristics uw switching supply current vs c out (single driver) v oh vs output current c out (pf) 20 switching supply current (ma) 40 60 50 80 100 10 30 70 90 1 100 1000 10000 1693 g13 0 10 750khz 500khz 200khz 100khz 25khz t a = 25 c v cc = 12v output current (ma) 0 0 v oh (mv) 50 150 200 250 350 10 50 70 1693 g15 100 300 40 90 100 20 30 60 80 v oh t a = 25 c v cc = 12v v ol vs output current output current (ma) 0 v ol (mv) 100 200 300 50 150 250 20 40 60 80 1693 g14 100 10 030507090 v cc = 12v t a = 25 c v ol ambient temperature ( c) ?5 0 power dissipation (mw) 200 600 800 1000 65 85 105 1400 1693 g16 400 35 ?5 5 25 45 125 1200 t j = 125 c ltc1693-3 ltc1693-1/ltc1693-2 thermal derating curves
6 ltc1693 pi n fu n ctio n s uuu so-8 package (ltc1693-1, ltc1693-2) in1, in2 (pins 1, 3): driver inputs. the inputs have v cc independent thresholds with 1.2v typical hysteresis to improve noise immunity. gnd1, gnd2 (pins 2, 4): driver grounds. connect to a low impedance ground. the v cc bypass capacitor should connect directly to this pin. the source of the external mosfet should also connect directly to the ground pin. this minimizes the ac current path and improves signal integrity. the ground pins should not be tied together if isolation is required between the two drivers of the ltc1693-1 and the ltc1693-2. out 1, out2 (pins 5, 7): driver outputs. the ltc1693- 1s outputs are in phase with their respective inputs (in1, in2). the ltc1693-2s topside driver output (out1) is in phase with its input (in1) and the bottom side drivers output (out2) is opposite in phase with respect to its input pin (in2). v cc1 , v cc2 (pins 6, 8): power supply inputs. msop package (ltc1693-3) in (pin 1): driver input. the input has v cc independent thresholds with hysteresis to improve noise immunity. nc (pins 2, 5, 6): no connect. phase (pin 3): output polarity select. connect this pin to v cc or leave it floating for noninverting operation. ground this pin for inverting operation. the typical phase pin input current when pulled low is 20 m a. gnd (pin 4): driver ground. connect to a low impedance ground. the v cc bypass capacitor should connect directly to this pin. the source of the external mosfet should also connect directly to the ground pin. this minimizes the ac current path and improves signal integrity. out (pin 7): driver output. v cc (pin 8): power supply input. v cc1 8 ltc1693-1 dual noninverting driver 7 1 2 out1 in1 gnd1 v cc2 6 5 3 4 out2 in2 gnd2 v cc 8 ltc1693-3 single driver with polarity select 7 1 4 out in gnd nc 6 5 3 2 nc 1693 bd phase nc v cc1 8 ltc1693-2 topside noninverting driver and bottom side inverting driver 7 1 2 out1 in1 gnd1 v cc2 6 5 3 4 out2 in2 gnd2 block diagra s m w
7 ltc1693 test circuits 4.7nf 12v 75v 12v p-p 1/2 ltc1693-1 or 1/2 ltc1693-2 4.7 f 0.1 m f 1693 tc03 4.7nf 87v 1/2 ltc1693-1 or 1/2 ltc1693-2 4.7 f 0.1 m f 75v high side switching test ltc1693-1, ltc1693-2 ground isolation test out1 v cc1 in1 1 gnd1 out2 5 7 8 v cc2 in2 75v 1693 tc02 gnd2 a 2 3 4 6 + ti i g diagra u ww out in 5v t rise/fall < 10ns 1nf or 4.7nf 4.7 m f 0.1 m f 1693 tc01 v cc = 12v ac parameter measurements v ih 90% 10% 90% 10% t r t f input noninverting output inverting output input rise/fall time < 10ns v il t f t plh t phl t plh 1693 td t r t phl
8 ltc1693 applicatio n s i n for m atio n wu u u overview the ltc1693 single and dual drivers allow 3v- or 5v-based digital circuits to drive power mosfets at high speeds. a power mosfets gate-charge loss increases with switch- ing frequency and transition time. the ltc1693 is capable of driving a 1nf load with a 16ns rise and fall time using a v cc of 12v. this eliminates the need for higher voltage supplies, such as 18v, to reduce the gate charge losses. the ltc1693s 360 m a quiescent current is an order of magnitude lower than most other drivers/buffers. this improves system efficiency in both standby and switching operation. since a power mosfet generally accounts for the majority of power loss in a converter, addition of the lt1693 to a high power converter design greatly improves efficiency, using very little board space. the ltc1693-1 and ltc1693-2 are dual drivers that are electrically isolated. each driver has independent opera- tion from the other. drivers may be used in different parts of a system, such as a circuit requiring a floating driver and the second driver being powered with respect to ground. input stage the ltc1693 employs 3v cmos compatible input thresh- olds that allow a low voltage digital signal to drive standard power mosfets. the ltc1693 incorporates a 4v internal regulator to bias the input buffer. this allows the 3v cmos compatible input thresholds (v ih = 2.6v, v il = 1.4v) to be independent of variations in v cc . the 1.2v hysteresis between v ih and v il eliminates false triggering due to ground noise during switching transitions. the ltc1693s input buffer has a high input impedance and draws less than 10 m a during standby. output stage the ltc1693s output stage is essentially a cmos in- verter, as shown by the p- and n-channel mosfets in figure 1 (p1 and n1). the cmos inverter swings rail-to- rail, giving maximum voltage drive to the load. this large voltage swing is important in driving external power mosfets, whose r ds(on) is inversely proportional to its gate overdrive voltage (v gs C v t ). p1 c gd v drain power mosfet l eq (load inductor or stray lead inductance) c gs out gnd ltc1693 1693 f01 n1 v + v cc figure 1. capacitance seen by out during switching the ltc1693s output peak currents are 1.4a (p1) and 1.7a (n1) respectively. the n-channel mosfet (n1) has higher current drive capability so it can discharge the power mosfets gate capacitance during high-to-low signal transitions. when the power mosfets gate is pulled low by the ltc1693, its drain voltage is pulled high by its load (e.g., a resistor or inductor). the slew rate of the drain voltage causes current to flow back to the mosfets gate through its gate-to-drain capacitance. if the mosfet driver does not have sufficient sink current capability (low output impedance), the current through the power mosfets miller capacitance (c gd ) can momentarily pull the gate high, turning the mosfet back on. rise/fall time since the power mosfet generally accounts for the ma- jority of power lost in a converter, its important to quickly turn it either fully on or off thereby minimizing the tran- sition time in its linear region. the ltc1693 has rise and fall times on the order of 16ns, delivering about 1.4a to 1.7a of peak current to a 1nf load with a v cc of only 12v. the ltc1693s rise and fall times are determined by the peak current capabilities of p1 and n1. the predriver, shown in figure 1 driving p1 and n1, uses an adaptive method to minimize cross-conduction currents. this is done with a 6ns nonoverlapping transition time. n1 is fully turned off before p1 is turned-on and vice-versa using this 6ns buffer time. this minimizes any cross-conduction currents while n1 and p1 are switching on and off yet is short enough to not prolong their rise and fall times.
9 ltc1693 driver electrical isolation the ltc1693-1 and ltc1693-2 incorporate two individual drivers in a single package that can be separately connected to gnd and v cc connections. figure 2 shows a circuit with an ltc1693-2, its top driver left floating while the bottom driver is powered with respect to ground. similarly figure 3 shows a simplified circuit of a ltc1693-1 which is driv- ing mosfets with different ground potentials. because there is 1g w of isolation between these drivers in a single package, ground current on the secondary side will not recirculate to the primary side of the circuit. power dissipation to ensure proper operation and long term reliability, the ltc1693 must not operate beyond its maximum tempera- ture rating. package junction temperature can be calcu- lated by: t j = t a + pd( q ja ) where: t j = junction temperature t a = ambient temperature pd = power dissipation q ja = junction-to-ambient thermal resistance power dissipation consists of standby and switching power losses: pd = pstdby + pac where: pstdby = standby power losses pac = ac switching losses the ltc1693 consumes very little current during standby. this dc power loss per driver at v cc = 12v is only (360 m a)(12v) = 4.32mw. ac switching losses are made up of the output capacitive load losses and the transition state losses. the capactive load losses are primarily due to the large ac currents needed to charge and discharge the load capacitance during switching. load losses for the cmos driver driving a pure capacitive load c out will be: load capacitive power (c out ) = (c out )(f)(v cc ) 2 the power mosfets gate capacitance seen by the driver output varies with its v gs voltage level during switching. a power mosfets capacitive load power dissipation can be calculated by its gate charge factor, q g . the q g value figure 2. simplified ltc1693-2 floating driver application figure 3. simplified ltc1693-1 application with different ground potentials out1 in1 gnd1 v cc1 v cc2 v + v + ltc1693-1 other primary-side circuits other secondary-side circuits out2 in2 gnd2 1693 f03 applicatio n s i n for m atio n wu u u out1 in1 gnd1 v cc1 v cc2 v + v in ltc1693-2 n1 out2 in2 gnd2 n2 1693 f02
10 ltc1693 corresponding to mosfets v gs value (v cc in this case) can be readily obtained from the manafacturers q gs vs v gs curves: load capacitive power (mos) = (v cc )(q g )(f) transition state power losses are due to both ac currents required to charge and discharge the drivers internal nodal capacitances and cross-conduction currents in the internal gates. uvlo and thermal shutdown the ltc1693s uvlo detector disables the input buffer and pulls the output pin to ground if v cc < 4v. the output remains off from v cc = 1v to v cc = 4v. this ensures that during start-up or improper supply voltage values, the ltc1693 will keep the output power mosfet off. the ltc1693 also has a thermal detector that similarly disables the input buffer and grounds the output pin if junction temperature exceeds 145 c. the thermal shut- down circuit has 20 c of hysteresis. this thermal limit helps to shut down the system should a fault condition occur. input voltage range ltc1693s input pin is a high impedance node and essen- tially draws neligible input current. this simplifies the input drive circuitry required for the input. the ltc1693 typically has 1.2v of hysteresis between its low and high input thresholds. this increases the drivers robustness against any ground bounce noises. however, care should still be taken to keep this pin from any noise pickup, especially in high frequency switching applications. in applications where the input signal swings below the gnd pin potential, the input pin voltage must be clamped to prevent the ltc1693s parastic substrate diode from turning on. this can be accomplished by connecting a series current limiting resistor r1 and a shunting schottky diode d1 to the input pin (figure 4). r1 ranges from 100 w to 470 w while d1 can be a bat54 or 1n5818/9. v cc in r1 d1 gnd ltc1693 input signal going bel0w gnd pin potential parasitic substrate diode 1693 f04 bypassing and grounding ltc1693 requires proper v cc bypassing and grounding due to its high speed switching (ns) and large ac currents (a). careless component placement and pcb trace routing may cause excessive ringing and under/overshoot. to obtain the optimum performance from the ltc1693: a. mount the bypass capacitors as close as possible to the v cc and gnd pins. the leads should be shortened as much as possible to reduce lead inductance. it is recommended to have a 0.1 m f ceramic in parallel with a low esr 4.7 m f bypass capacitor. for high voltage switching in an inductive environment, ensure that the bypass capacitors v max ratings are high enough to prevent breakdown. this is especially important for floating driver applications. b. use a low inductance, low impedance ground plane to reduce any ground drop and stray capacitance. re- member that the ltc1693 switches 1.5a peak currents and any significant ground drop will degrade signal integrity. c. plan the ground routing carefully. know where the large load switching current is coming from and going to. maintain separate ground return paths for the input pin and output pin. terminate these two ground traces only at the gnd pin of the driver (star network). d. keep the copper trace between the driver output pin and the load short and wide. figure 4 applicatio n s i n for m atio n wu u u
11 ltc1693 typical applicatio n s u tdrive pwr v in pinv binh v in c t i th sense 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 bdrive pgnd lb out lb in sgnd shdn v fb sense + u2 ltc1266a in1 gnd1 in2 gnd2 8 7 6 5 1 2 3 4 v cc1 out1 v cc2 out2 u1 ltc1693-2 c5 1nf c6 1nf 50v c10 0.1 f 50v c13 10nf 100v c11 0.1 f 100v c12 0.1 f x7r t1a 9.2 h 9t 4 #26 t1b 123 h 33t #30 t1c 33t #30 t1d 33t #30 t1e not used 1 10 3 2 6 7 8 9 4 5 c12 1nf 5% c7 0.1 f 25v c in2 330 f 6.3v +v1 v in 5v gnd c4 0.1 f c11 120pf 5% npo r4 43k r1 10k r f1 2.49k 1% r3 0.010 r5 100 r7 1k 5% r9 4.99k 70v 200ma 24v 240ma gnd r10 32k 1% c a1 220 f 35v d4 mbr1100 l1 100 h d6 12v 500mw r8 10k 1% r f4 46.4k 0.1% r f3 24.3k 0.1% r2 100 q1 irl2505 q3 mtd2n20 r x1 24 1/2w + c in1 330 f 6.3v + c1 100pf c2 0.33 f c8 0.1 f 16v c9 10nf 50v c3 0.1 f d2 mmsd4148 d3 mmsd4148 +v in c b1 120 f 63v + c b2 120 f 63v t1: philips efd25-3c85 first wind t1b, t1c and t1d trifilar second wind t1a quadfilar air gap: 0.88mm or 2 0.44mm spacers + c b3 39 f 100v + + 2 1 8 7 3 4 6 u4 lt1006s8 + c a2 220 f 35v + c a3 220 f 35v + d5 mur120 1693 ta03 + 2 24v 1 8 7 3 4 6 u3 lt1006s8 r6 1.2k r f2 47.5k 1% slic power supply
12 ltc1693 typical applicatio n s u i th sgnd pgnd lbo shdn lbi bdrv tdrv c t 7121510 v in c9 0.015 f c8 1500pf c10 220pf c7 390pf c5 0.1 f c6 10 f 16v r7 1k r8 30.1k binh pinv pwr v in 1 9 c4 1000pf 8 16 13 11 14 2 v in ?v v out 3.3v 6a 3 4 5 6 sense u1 ltc1266 sense v fb r6 10 r5 2.2 r4 2.2 r1 0.015 1w v s r3 100 r11 100k q5 2n3906 panasonic etqpaf4r8ha coilcraft do3316p-102 3.3v v s 1693 ta03 r17 6.81k q4 2n3906 * ** q3 2n7002 r10 100k r15 1.2k c16 10 f 16v r14 51 c15 0.1 f u2a ltc1693-2 q2 si4420 2 q1 si4420 2 1 7 8 2 u2b ltc1693-2 3 5 6 4 q6 2n3904 r19 1k r13 1.30k r12 4.75k r9 13k r16 3.6k d5 mbro530 d3 mbro530 d1 mbrs130 c17 100pf r18 6.81k + c1 330 f 6.3v 5 + c2 330 f 6.3v 5 + d2 mbro530 d4 mbro530 + c14 10 f 16v + c12 4700pf c11 4700pf l1* 4.8 h c13 0.1 f l2** 1 h r2 0.015 1w c3 330 f 6.3v 2 + negative-to-positive synchronous boost converter
13 ltc1693 typical applicatio n s u tdrive pwr v in pinv binh v in c t i th sense 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 bdrive pgnd lb out lb in sgnd shdn v fb sense + u2 ltc1266a d1 6.2v 500mw c1 220 f 16v c3 0.1 f 100v q4 fzt694b d3 mmsd4148 d2 mmsd4148 r1 47k in1 gnd1 in2 gnd2 8 7 6 5 1 2 3 4 v cc1 out1 v cc2 out2 u1 ltc1693-1 winding t1a t1b t1c t1d t1e t1f # turns 3 1 2 3 9 32 awg 28 28 28 28 28 28 + r11 12.1k r4 390 d10 1n4148 c6 100pf npo t1 winding order: 1. t1a, t1b, t1c, t1d quad-filar, wound first, after t1a, t1b, t1c and t1d wound, remove 2 turns from t1b and 1 turn from t1c 2. t1e wound on top, spread evenly 3. layer of insulation 4. t1f wound on top, spread evenly t1 core: coiltronics vp4-type, air gap, 0.7mm or 2 0.35mm spacers primary inductance of t1f = 50 h alternative cores: siemens efd20, n67 material, tdk pc40-epc17 t1 transformer coiltronics vp4-type r5 100 q2 irf620 c5 1nf c2 0.1 f c7 0.1 f 25v c in1 220 f 50v + c in2 220 f 50v c c2 100pf 5% c c1 10nf r cl 6.8k c11 120pf 5% npo +v1 +v1 +v1 ? in 24v to 35v gnd + t1a 3t #28 6 7 12 1 11 2 10 3 9 4 8 5 q o1 si9803 q o2 si9803 l o2 2.2 h d o3 mbrm140 r9 1m d8 bav21 d7 bav21 d6 3.3v 500mw r2 22 q1 2n5401 c4 1nf 50v t1b 1t #28 t1c 2t #28 c o2a 330 f 6.3v t1f 32t #28 50 h t1d 3t #28 t1e 9t #28 l o1 1 h 5v l o3 2.2 h d o4 mbrm140 + c o3a 330 f 6.3v + c o4 220 f 25v c11 0.1 f 100v 1693 ta04 d9 5.6v 0.5w c9 1nf r8 1k q3 2n2222 + c o1a 330 f 6.3v + c o3b 330 f 6.3v + c o2b 330 f 6.3v + r f1 42.2k 1% r6 10 r x1 120 1/2w r3 0.1 r7 4.7 c o1b 330 f 6.3v + c x1 220pf 50v c o4b 0.1 f 16v 5v 0.8a 3.3v 0.3a 2.5v 0.3a ?v 30ma multiple output telecom power supply
14 ltc1693 typical applicatio n s u w2 t2 w1 w3 6 5 7 2 v cc2 out2 out1 gnd1 v cc1 in2 in1 gnd2 8 3 1 4 ltc1693-1 6 5 7 2 v cc2 out2 out1 gnd1 gnd2 in2 v cc1 in1 4 3 8 1 ltc1693-1 v + comp rtop gnd-f gnd-s rmid 657 324 t2 t1 w4 t2 4.7k 470 470 bat54 bat54 w5 w1 w4 sud30n04-10 sud30n04-10 irf1310ns 1nf sec hv 10 10 4.8 h panasonic etqp af4r8h 1nf c3 330 f 6.3v c4 330 f 6.3v c5 330 f 6.3v 10 4.7nf 4.7nf 47 0.1 f t2 w3 4.7k + + + ? out +v out ? out +v out output 5v/10a c3, c4, c5: sanyo os-con 1 f fzt600 4.7 f 25v 0.47 f 50v 2k 3.1v mmft3904 10 bas21 sec hv lt1431cs8 ref coll 18 1k 470 100k 3.01k 1% 4.42k 1% 9.31k 1% 0.01 f +v out 0.22 f 1k ? out short jp1 for 5v out v boost tg ts sense + sense 12v in run/shdn phase bg v fb sync 5v ref ct sl/adj i avg v ref sgnd pgnd ss v c lt1339 + 100k +v in 13k 100k 2.4k 4.53k 0.1 f 1 f 2.2nf 2.2nf 0.1 f 4.7nf 68 f 20v avx tspe 3.9k 17 13 14 1 20 19 18 11 12 2 3 4 5 10 8 15 6 7 16 9 mmbd914lt1 3.3 1 f cny17-3 p p 36k bas21 bas21 bas21 p jp2 jp3 5v out short jp3, open jp2 3.3v out , short jp2, open jp3 coilcraft do1608-105 t1 10k 10 2.2 f 0.025 1/2w 470 10 fmmt718 fmmt718 p irf1310ns murs120 murs120 12v 2.2 f mmbd914lt1 470 bat54 w2 c1 1.2 f 100v cer c2 1.2 f 100v cer +v in p ? in +v in +v in w3, 10t 32awg, w4, 10t 32awg w5, 10t 2 x 26awg w4, 7t 6 x 26awg w1, 18t bifilar 31awg w3, 6t bifilar 31awg w1, 10t 2 x 26awg w1, 10t 32awg, w2, 15t 32awg 2mil poly film 2mil poly film output current 012345678910 efficiency 95 90 85 36v in 48v in 72v in t1 philips efd20-3f3 core l p = 720 h (ai = 1800) t2 er11/5 core ai = 960 h 1693 ta10 input 36v to 75v 48v to 5v isolated synchronous forward dc/dc converter
15 ltc1693 typical applicatio n s u 5v to 12v boost converter output voltage efficiency + 4 3 8 v cc = 5v c1 680pf c2 0.1 f c3 4.7 f + c l 47 f 1693 ta06a v out 12v 50ma inductor peak current 600ma r2, c1 set the oscillation frequency at 200khz r1 sets the duty cycle at 45% efficiency 80% at 50ma load *sumida cdrh125-220 r2 13k 1% r1 7.5k 1% d1 bat85 d2 1n5819 l1* 22 h q1 bs170 7 1 ltc1693-3 duty cycle (%) 35 6 output voltage (v) 8 10 12 14 18 40 45 50 55 1693 ta06b 60 65 16 v cc = 5v 50ma load output voltage (v) 10 50 efficiency (%) 60 70 80 90 100 11 12 13 14 1693 ta06c 15 16 v cc = 5v 50ma load
16 ltc1693 typical applicatio n s u charge pump doubler output voltage efficiency 3 4 8 v cc = 5v v cc = 5v c1 680pf c2 1 f c3 1 f + c l 47 f 1693 ta07a v out r1, c1 set the oscillation frequency at 150khz and the duty cycle at 35% r1 11k 1% d2 1n5817 d1 1n5817 7 1 ltc1693-3 output current (ma) 0 output voltage (v) 4 8 12 2 6 10 20 40 60 80 1693 ta07b 100 10 030507090 v cc = 5v output current (ma) 0 efficiency (%) 60 80 100 40 1693 ta07c 40 20 0 10 20 30 50 90 60 70 80 100 v cc = 5v
17 ltc1693 typical applicatio n s u charge pump inverter output voltage efficiency 3 4 8 v cc = 5v c1 680pf c2 1 f c3 1 f + c l 47 f 1693 ta08a v out r1, c1 set the oscillation frequency at 150khz and the duty cycle at 35% r1 11k 1% d2 1n5817 d1 1n5817 7 1 ltc1693-3 output current (ma) ? output voltage (v) ? ? 0 ? ? ? 20 40 60 80 1693 ta08b 100 10 030507090 v cc = 5v output current (ma) 0 efficiency (%) 60 80 100 40 1693 ta08c 40 20 0 10 20 30 50 90 60 70 80 100 v cc = 5v
18 ltc1693 typical applicatio n s u charge pump tripler output voltage efficiency 3 4 8 v cc = 5v v cc = 5v c1 680pf c2 1 f c3 1 f c5 1 f + c4 3.3 f + c l 47 f 1693 ta09a v out r1, c1 set the oscillation frequency at 150khz and the duty cycle at 35% r1 11k 1% d2 1n5817 d3 1n5817 d4 1n5817 d1 1n5817 7 1 ltc1693-3 output current (ma) 0 0 output voltage (v) 2 6 8 10 60 70 80 90 18 1693 ta09b 4 10 20 30 40 50 100 12 14 16 v cc = 5v output current (ma) 0 0 efficiency (%) 10 30 40 50 60 70 80 90 90 1693 ta09c 20 10 20 30 40 50 100 60 70 80 v cc = 5v
19 ltc1693 package descriptio n u dimensions in inches (millimeters) unless otherwise noted. ms8 package 8-lead plastic msop (ltc dwg # 05-08-1660) msop (ms8) 1197 * dimension does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.006" (0.152mm) per side ** dimension does not include interlead flash or protrusions. interlead flash or protrusions shall not exceed 0.006" ( 0.152mm ) per side 0.021 0.006 (0.53 0.015) 0 ?6 typ seating plane 0.007 (0.18) 0.040 0.006 (1.02 0.15) 0.012 (0.30) ref 0.006 0.004 (0.15 0.102) 0.034 0.004 (0.86 0.102) 0.0256 (0.65) typ 12 3 4 0.192 0.004 (4.88 0.10) 8 7 6 5 0.118 0.004* (3.00 0.102) 0.118 0.004** (3.00 0.102) 1 2 3 4 0.150 ?0.157** (3.810 ?3.988) 8 7 6 5 0.189 ?0.197* (4.801 ?5.004) 0.228 ?0.244 (5.791 ?6.197) 0.016 ?0.050 0.406 ?1.270 0.010 ?0.020 (0.254 ?0.508) 45 0 ?8 typ 0.008 ?0.010 (0.203 ?0.254) so8 0996 0.053 ?0.069 (1.346 ?1.752) 0.014 ?0.019 (0.355 ?0.483) 0.004 ?0.010 (0.101 ?0.254) 0.050 (1.270) typ dimension does not include mold flash. mold flash shall not exceed 0.006" (0.152mm) per side dimension does not include interlead flash. interlead flash shall not exceed 0.010" (0.254mm) per side * ** s8 package 8-lead plastic small outline (narrow 0.150) (ltc dwg # 05-08-1610) information furnished by linear technology corporation is believed to be accurate and reliable. however, no responsibility is assumed for its use. linear technology corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
20 ltc1693 ? linear technology corporation 1999 1693fa lt/tp 1000 2k rev a ? printed in usa part number description comments ltc1154 high side micropower mosfet drivers internal charge pump, 4.5v to 48v supply range, t on = 80 m s, t off = 28 m s ltc1155 dual micropower high/low side drivers with 4.5v to 18v supply range internal charge pump ltc1156 dual micropower high/low side drivers with 4.5v to 18v supply range internal charge pump ltc1157 3.3v dual micropower high/low side driver 3.3v or 5v supply range lt ? 1160/lt1162 half/full bridge n-channel power mosfet driver dual driver with topside floating driver, 10v to 15v supply range LT1161 quad protected high side mosfet driver 8v to 48v supply range, t on = 200 m s, t off = 28 m s ltc1163 triple 1.8v to 6v high side mosfet driver 1.8v to 6v supply range, t on = 95 m s, t off = 45 m s lt1339 high power synchronous dc/dc controller current mode operation up to 60v, dual n-channel synchronous drive ltc1435 high efficiency, low noise current mode 3.5v to 36v operation with ultrahigh efficiency, dual n-channel mosfet step-down dc/dc controller synchronous drive related parts linear technology corporation 1630 mccarthy blvd., milpitas, ca 95035-7417 (408) 432-1900 l fax: (408) 434-0507 l www.linear-tech.com isolated push-pull dc/dc converter output current (a) 0 0 output voltage (v) 2 6 8 10 14 0.1 0.5 0.7 1693 f05b 4 12 0.4 0.9 1.0 0.2 0.3 0.6 0.8 v cc = 5v output current (a) 0 efficiency (%) 100 90 80 70 60 50 40 30 20 0.8 1693 f05c 0.2 0.4 0.6 1.0 0.7 0.1 0.3 0.5 0.9 v cc = 5v output voltage efficiency typical applicatio n u 74hc14 v cc = 5v v cc = 5v 14 c2 0.1 f c1 390pf c3 0.1 f c4 1 f r1 6.2k 7 12 13 ltc1693-2 6 4 t1: philips cphs-efd20-1s-10p first wind t1a and t1c bifilar, then wind t1e and t1f bifilar, then wind t1b and t1d bifilar 5 1693 f05a 3 ltc1693-2 8 2 q1 si4410 r2 10 t1a 24t #32 v out 12v 1a c5 2.2nf 100v 2 q2 si4410 7 v cc = 5v 1 74hc74 preset clr gnd d 7 8 9 14 13 10 12 11 q q c6 330 f 6.3v c9 270 f 25v 3 r3 10 d1 mbr340 c7 2.2nf 100v r4 10 c8 2.2nf 100v d2 mbr340 l1 1 h + + 2 1 t1d 24t #32 4 3 t1b 24t #32 t1e 24t #28 2 1 8 9 t1f 24t #28 8 9 t1c 24t #32 4 3


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